Infineon · Thyristors & Power Discretes · MPN IM241L6T2BAKMA1
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| Pd - Power Dissipation | 15W |
|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.62V@15V,2A |
| Operating Temperature | -40℃~+150℃@(Tj) |
15W 600V DIP-23 IGBT Modules RoHS