Infineon · Thyristors & Power Discretes · MPN IKZA50N65EH7XKSA1
No reviews yet — be the first to review Infineon IKZA50N65EH7XKSA1.
| Pd - Power Dissipation | 250W |
|---|---|
| Td(off) | 142ns |
| Td(on) | 15ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 2.591nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.9V@0.44mA |
| Vce Saturation(VCE(sat)) | 1.65V@50A,15V |
| Gate Charge(Qg) | 103nC@50A,15V |
| Reverse Recovery Time(trr) | 54.6ns |
| Switching Energy(Eoff) | 490uJ |
IGBT 650V 80A 250W Through Hole TO-247-4