Infineon · Thyristors & Power Discretes · MPN IKZA40N65EH7XKSA1
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| Td(off) | 134ns |
|---|---|
| Pd - Power Dissipation | 210W |
| Td(on) | 13ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 9.1pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.85V |
| Vce Saturation(VCE(sat)) | 1.4V |
| Collector Cut-Off Current (Ices) | 10uA |
| Reverse Recovery Time(trr) | 49.6ns |
| Switching Energy(Eoff) | 360uJ |
210W 80A 650V PG-TO247-4-STD-NT3.7 Single IGBTs RoHS