Infineon · Thyristors & Power Discretes · MPN IKZA100N65EH7XKSA1
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| Td(off) | 240ns |
|---|---|
| Pd - Power Dissipation | 429W |
| Td(on) | 32ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 140A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 5.15nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.9V@0.88mA |
| Gate Charge(Qg) | 207nC@100A,15V |
| Vce Saturation(VCE(sat)) | 1.65V@100A,15V |
| Reverse Recovery Time(trr) | 62ns |
| Switching Energy(Eoff) | 1.22mJ |
IGBT 650V 140A 429W Through Hole TO-247-4