Infineon · Thyristors & Power Discretes · MPN IKZ75N65ES5
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| Pd - Power Dissipation | 395W |
|---|---|
| Td(off) | 405ns |
| Td(on) | 46ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 4.5nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.75mA |
| Gate Charge(Qg) | 164nC@15V |
| Vce Saturation(VCE(sat)) | 1.75V@75A,15V |
| Reverse Recovery Time(trr) | 72ns |
| Switching Energy(Eoff) | 1.5mJ |
IGBT 650V 80A 395W Through Hole TO-247-4