Infineon · Thyristors & Power Discretes · MPN IKZ75N65EL5
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| Pd - Power Dissipation | 536W |
|---|---|
| Td(off) | 275ns |
| Td(on) | 120ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 12.1nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.2V@1mA |
| Vce Saturation(VCE(sat)) | 1.35V@75A,15V |
| Reverse Recovery Time(trr) | 59ns |
| Switching Energy(Eoff) | 3.2mJ |
| Turn-On Energy (Eon) | 1.57mJ |
IGBT 650V 100A 536W Through Hole TO-247-4