Infineon · Thyristors & Power Discretes · MPN IKZ75N65EH5
No reviews yet — be the first to review Infineon IKZ75N65EH5.
| Pd - Power Dissipation | 395W |
|---|---|
| Td(off) | 347ns |
| Td(on) | 26ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 90A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 16pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.75mA |
| Vce Saturation(VCE(sat)) | 2.1V@75A,15V |
| Reverse Recovery Time(trr) | 58ns |
| Switching Energy(Eoff) | 430uJ |
| Turn-On Energy (Eon) | 680uJ |
395W 90A 650V TO-247-4 Single IGBTs RoHS