Infineon · Thyristors & Power Discretes · MPN IKZ50N65ES5
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| Pd - Power Dissipation | 274W |
|---|---|
| Td(off) | 294ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 36ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@500uA |
| Vce Saturation(VCE(sat)) | 1.35V@50A,15V |
| Reverse Recovery Time(trr) | 62ns |
| Switching Energy(Eoff) | 880uJ |
| Turn-On Energy (Eon) | 770uJ |
274W 80A 650V TO-247-4 Single IGBTs RoHS