Infineon IKY75N120CH7XKSA1

Infineon · Thyristors & Power Discretes · MPN IKY75N120CH7XKSA1

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Specifications

Td(off)367ns
Pd - Power Dissipation549W
Td(on)42ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)83A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)9.6nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.7V@1.2mA
Gate Charge(Qg)550nC@75A,15V
Vce Saturation(VCE(sat))2.15V@75A,15V
Reverse Recovery Time(trr)90ns
Switching Energy(Eoff)2.02mJ

Technical details

IGBT 1.2kV 83A 549W Through Hole TO-247-4

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