Infineon · Thyristors & Power Discretes · MPN IKY75N120CH3XKSA1
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| Td(off) | 303ns |
|---|---|
| Pd - Power Dissipation | 938W |
| Td(on) | 38ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 290pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.35V@15V,75A |
| Vce Saturation(VCE(sat)) | 2.35V@75A,15V |
| Reverse Recovery Time(trr) | 292ns |
| Switching Energy(Eoff) | 2.9mJ |
938W 150A 1.2kV TO-247-4 Single IGBTs RoHS