Infineon IKY75N120CH3XKSA1

Infineon · Thyristors & Power Discretes · MPN IKY75N120CH3XKSA1

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Specifications

Td(off)303ns
Pd - Power Dissipation938W
Td(on)38ns
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)290pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.35V@15V,75A
Vce Saturation(VCE(sat))2.35V@75A,15V
Reverse Recovery Time(trr)292ns
Switching Energy(Eoff)2.9mJ

Technical details

938W 150A 1.2kV TO-247-4 Single IGBTs RoHS

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