Infineon · Thyristors & Power Discretes · MPN IKY50N120CH3
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| Pd - Power Dissipation | 652W |
|---|---|
| Td(off) | 296ns |
| Td(on) | 32ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 199pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@1.7mA |
| Vce Saturation(VCE(sat)) | 2.35V@50A,15V |
| Reverse Recovery Time(trr) | 255ns |
| Switching Energy(Eoff) | 1.9mJ |
| Turn-On Energy (Eon) | 2.3mJ |
652W 100A 1.2kV TO-247-4 Single IGBTs RoHS