Infineon IKY40N120CH3

Infineon · Thyristors & Power Discretes · MPN IKY40N120CH3

No reviews yet — be the first to review Infineon IKY40N120CH3.

Specifications

Td(off)280ns
Pd - Power Dissipation500W
Td(on)30ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)132pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.1V@1.5mA
Vce Saturation(VCE(sat))2.35V@40A,15V
Reverse Recovery Time(trr)350ns
Switching Energy(Eoff)1.3mJ
Turn-On Energy (Eon)2.18mJ

Technical details

500W 80A 1.2kV TO-247-4 Single IGBTs RoHS

Related Thyristors & Power Discretes