Infineon · Thyristors & Power Discretes · MPN IKWH75N65EH7XKSA1
No reviews yet — be the first to review Infineon IKWH75N65EH7XKSA1.
| Pd - Power Dissipation | 341W |
|---|---|
| Td(off) | 195ns |
| Td(on) | 25ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 16.8pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.9V@0.66mA |
| Vce Saturation(VCE(sat)) | 1.65V@75A,15V |
| Reverse Recovery Time(trr) | 89ns |
| Switching Energy(Eoff) | 1.4mJ |
| Turn-On Energy (Eon) | 2.42mJ |
341W 80A 650V TO-247-3 Single IGBTs RoHS