Infineon IKWH70N67PR7XKSA1

Infineon · Thyristors & Power Discretes · MPN IKWH70N67PR7XKSA1

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Specifications

Td(off)246ns
Pd - Power Dissipation313W
Td(on)22ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)140A
Collector-Emitter Breakdown Voltage (Vces)670V
Input Capacitance(Cies)3.86nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.2V@0.4mA
Vce Saturation(VCE(sat))1.75V@70A,15V
Gate Charge(Qg)181nC@70A,15V
Switching Energy(Eoff)1.14mJ
Turn-On Energy (Eon)1.58mJ

Technical details

IGBT 670V 140A 313W Through Hole TO-247-3

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