Infineon · Thyristors & Power Discretes · MPN IKWH70N67PR7XKSA1
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| Td(off) | 246ns |
|---|---|
| Pd - Power Dissipation | 313W |
| Td(on) | 22ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 140A |
| Collector-Emitter Breakdown Voltage (Vces) | 670V |
| Input Capacitance(Cies) | 3.86nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.4mA |
| Vce Saturation(VCE(sat)) | 1.75V@70A,15V |
| Gate Charge(Qg) | 181nC@70A,15V |
| Switching Energy(Eoff) | 1.14mJ |
| Turn-On Energy (Eon) | 1.58mJ |
IGBT 670V 140A 313W Through Hole TO-247-3