Infineon · Thyristors & Power Discretes · MPN IKWH60N67PR7XKSA1
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| Td(off) | 208ns |
|---|---|
| Pd - Power Dissipation | 283W |
| Td(on) | 20ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 122A |
| Collector-Emitter Breakdown Voltage (Vces) | 670V |
| Input Capacitance(Cies) | 3.311nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.3mA |
| Gate Charge(Qg) | 148nC@60A,15V |
| Vce Saturation(VCE(sat)) | 1.75V |
| Switching Energy(Eoff) | 780uJ |
| Turn-On Energy (Eon) | 1.28mJ |
IGBT 670V 122A 283W Through Hole TO-247-3