Infineon · Thyristors & Power Discretes · MPN IKWH50N67PR7XKSA1
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| Td(off) | 182ns |
|---|---|
| Pd - Power Dissipation | 246W |
| Td(on) | 18ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 105A |
| Collector-Emitter Breakdown Voltage (Vces) | 670V |
| Reverse Transfer Capacitance (Cres) | 14.2pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.285mA |
| Vce Saturation(VCE(sat)) | 1.75V@50A,15V |
| Switching Energy(Eoff) | 560uJ |
| Turn-On Energy (Eon) | 980uJ |
| Input Capacitance(Cies) | 2.846nF |
IGBT 670V 105A 246W Through Hole TO-247-3