Infineon · Thyristors & Power Discretes · MPN IKWH50N65WR6
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| Td(off) | 351ns |
|---|---|
| Pd - Power Dissipation | 205W |
| Td(on) | 40ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 85A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 14pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.5mA |
| Vce Saturation(VCE(sat)) | 1.85V@50A,15V |
| Reverse Recovery Time(trr) | 87ns |
| Switching Energy(Eoff) | 730uJ |
| Turn-On Energy (Eon) | 1.5mJ |
205W 85A 650V TO-247-3 Single IGBTs RoHS