Infineon · Thyristors & Power Discretes · MPN IKWH50N65EH7XKSA1
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| Td(off) | 147ns |
|---|---|
| Pd - Power Dissipation | 249W |
| Td(on) | 19ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 2.566nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.9V@0.44mA |
| Vce Saturation(VCE(sat)) | 1.65V@50A,15V |
| Gate Charge(Qg) | 102nC@50A,15V |
| Reverse Recovery Time(trr) | 76ns |
| Switching Energy(Eoff) | 650uJ |
IGBT 650V 80A 249W Through Hole TO-247-3