Infineon · Thyristors & Power Discretes · MPN IKWH40N65WR6
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| Td(off) | 353ns |
|---|---|
| Pd - Power Dissipation | 175W |
| Td(on) | 37ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 70A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.4mA |
| Vce Saturation(VCE(sat)) | 1.85V@40A,15V |
| Reverse Recovery Time(trr) | 79ns |
| Switching Energy(Eoff) | 570uJ |
| Turn-On Energy (Eon) | 1.09mJ |
175W 70A 650V TO-247-3 Single IGBTs RoHS