Infineon · Thyristors & Power Discretes · MPN IKWH30N65WR5XKSA1
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| Td(off) | 398ns |
|---|---|
| Pd - Power Dissipation | 190W |
| Td(on) | 41ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 75A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 13pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.3mA |
| Vce Saturation(VCE(sat)) | 1.7V@30A,15V |
| Switching Energy(Eoff) | 400uJ |
| Turn-On Energy (Eon) | 870uJ |
| Input Capacitance(Cies) | 3.23nF |
190W 75A 650V TO-247-3 Single IGBTs RoHS