Infineon · Thyristors & Power Discretes · MPN IKWH100N65EH7XKSA1
No reviews yet — be the first to review Infineon IKWH100N65EH7XKSA1.
| Td(off) | 240ns |
|---|---|
| Pd - Power Dissipation | 427W |
| Td(on) | 32ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 140A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 5.221nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.9V@0.88mA |
| Gate Charge(Qg) | 199nC@100A,15V |
| Vce Saturation(VCE(sat)) | 1.65V@100A,15V |
| Reverse Recovery Time(trr) | 106ns |
| Switching Energy(Eoff) | 2.37mJ |
IGBT 650V 140A 427W Through Hole TO-247-3