Infineon IKW75N65SS5XKSA1

Infineon · Thyristors & Power Discretes · MPN IKW75N65SS5XKSA1

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Specifications

Td(off)145ns
Pd - Power Dissipation395W
Td(on)21ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)4nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.2V@0.75mA
Vce Saturation(VCE(sat))1.7V@75A,15V
Gate Charge(Qg)164nC@15V
Switching Energy(Eoff)420uJ

Technical details

IGBT FS (Field Stop) 650V 80A 395W Through Hole TO-247-3

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