Infineon · Thyristors & Power Discretes · MPN IKW75N65SS5XKSA1
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| Td(off) | 145ns |
|---|---|
| Pd - Power Dissipation | 395W |
| Td(on) | 21ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 4nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.75mA |
| Vce Saturation(VCE(sat)) | 1.7V@75A,15V |
| Gate Charge(Qg) | 164nC@15V |
| Switching Energy(Eoff) | 420uJ |
IGBT FS (Field Stop) 650V 80A 395W Through Hole TO-247-3