Infineon · Thyristors & Power Discretes · MPN IKW75N65ET7XKSA1
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| Td(off) | 310ns |
|---|---|
| Pd - Power Dissipation | 333W |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 28ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 46pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@0.75mA |
| Vce Saturation(VCE(sat)) | 1.65V@75A,15V |
| Reverse Recovery Time(trr) | 100ns |
| Switching Energy(Eoff) | 1.23mJ |
IGBT FS (Field Stop) 650V 80A 333W Through Hole TO-247-3