Infineon · Thyristors & Power Discretes · MPN IKW75N60T
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| Pd - Power Dissipation | 428W |
|---|---|
| Td(off) | 330ns |
| Td(on) | 33ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 75A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@1.2mA |
| Vce Saturation(VCE(sat)) | 2V@75A,15V |
| Gate Charge(Qg) | 470nC@15V |
| Reverse Recovery Time(trr) | 121ns |
| Switching Energy(Eoff) | 2.5mJ |
| Turn-On Energy (Eon) | 2mJ |
428W 75A 600V TO-247-3 Single IGBTs RoHS