Infineon IKW75N120CH7XKSA1

Infineon · Thyristors & Power Discretes · MPN IKW75N120CH7XKSA1

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Specifications

Pd - Power Dissipation549W
Td(off)527ns
Td(on)55ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)92A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.7V@1.2mA
Gate Charge(Qg)535nC@75A,15V
Vce Saturation(VCE(sat))2.15V@75A,15V
Reverse Recovery Time(trr)145ns
Switching Energy(Eoff)1.66mJ
Turn-On Energy (Eon)4.22mJ

Technical details

IGBT 1.2kV 92A 549W Through Hole TO-247-3

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