Infineon · Thyristors & Power Discretes · MPN IKW50N65RH5XKSA1
No reviews yet — be the first to review Infineon IKW50N65RH5XKSA1.
| Td(off) | 180ns |
|---|---|
| Pd - Power Dissipation | 305W |
| Td(on) | 22ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,50A |
| Gate Charge(Qg) | 120nC |
| Switching Energy(Eoff) | 180uJ |
| Turn-On Energy (Eon) | 230uJ |
IGBT FS (Field Stop) 650V 80A 305W Through Hole TO-247-3