Infineon · Thyristors & Power Discretes · MPN IKW50N60TFKSA1
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| Pd - Power Dissipation | 333W |
|---|---|
| Td(off) | 299ns |
| Operating Temperature | -40℃~+175℃ |
| Td(on) | 26ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.8mA |
| Vce Saturation(VCE(sat)) | 2V@50A,15V |
| Reverse Recovery Time(trr) | 143ns |
| Switching Energy(Eoff) | 1.4mJ |
| Turn-On Energy (Eon) | 1.2mJ |
IGBT FS (Field Stop) 600V 80A 333W Through Hole TO-247-3