Infineon · Thyristors & Power Discretes · MPN IKW50N60TA
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| Pd - Power Dissipation | 333W |
|---|---|
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Reverse Recovery Time(trr) | 143ns |
| Switching Energy(Eoff) | 1.4mJ |
| Turn-On Energy (Eon) | 1.2mJ |
333W 80A 600V FS (Field Stop) TO-247-3 Single IGBTs RoHS