Infineon · Thyristors & Power Discretes · MPN IKW50N60DTP
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| Pd - Power Dissipation | 319.2W |
|---|---|
| Td(off) | 215ns |
| Td(on) | 20ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 67pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.8mA |
| Vce Saturation(VCE(sat)) | 1.8V@50A,15V |
| Reverse Recovery Time(trr) | 115ns |
| Switching Energy(Eoff) | 850uJ |
| Turn-On Energy (Eon) | 1.53mJ |
319.2W 80A 600V TO-247-3 Single IGBTs RoHS