Infineon · Thyristors & Power Discretes · MPN IKW50N120CH7XKSA1
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| Pd - Power Dissipation | 398W |
|---|---|
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 86A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 6.6nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.7V@0.8mA |
| Vce Saturation(VCE(sat)) | 2.15V@50A,15V |
| Gate Charge(Qg) | 375nC@50A,15V |
| Reverse Recovery Time(trr) | 116ns |
| Switching Energy(Eoff) | 1.12mJ |
| Turn-On Energy (Eon) | 2.33mJ |
IGBT 1.2kV 86A 398W Through Hole TO-247-3