Infineon · Thyristors & Power Discretes · MPN IKW40N65WR5
No reviews yet — be the first to review Infineon IKW40N65WR5.
| Td(off) | 432ns;500ns |
|---|---|
| Td(on) | 42ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 20pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V |
| Vce Saturation(VCE(sat)) | 1.4V |
| Collector Cut-Off Current (Ices) | 40uA |
| Reverse Recovery Time(trr) | 112ns;153ns |
| Switching Energy(Eoff) | 160uJ;240uJ |
| Turn-On Energy (Eon) | 770uJ;820uJ |
80A 650V TO-247-3 Single IGBTs RoHS