Infineon · Thyristors & Power Discretes · MPN IKW40N65H5FKSA1
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| Td(off) | 165ns |
|---|---|
| Pd - Power Dissipation | 250W |
| Td(on) | 22ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 74A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 9pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.4mA |
| Vce Saturation(VCE(sat)) | 2.1V@40A,15V |
| Reverse Recovery Time(trr) | 62ns |
| Switching Energy(Eoff) | 120uJ |
IGBT 650V 74A Through Hole TO-247-3