Infineon IKW40N65F5F

Infineon · Thyristors & Power Discretes · MPN IKW40N65F5F

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Specifications

Td(off)160ns
Pd - Power Dissipation255W
Td(on)19ns
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)74A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)9pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.2V@0.4mA
Vce Saturation(VCE(sat))2.1V@40A,15V
Reverse Recovery Time(trr)60ns
Switching Energy(Eoff)100uJ

Technical details

IGBT FS (Field Stop) 650V 74A 255W Through Hole TO-247-3

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