Infineon IKW40N65F5

Infineon · Thyristors & Power Discretes · MPN IKW40N65F5

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Specifications

Pd - Power Dissipation255W
Td(off)160ns
Td(on)19ns
Current - Collector(Ic)74A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)9pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.2V@0.4mA
Vce Saturation(VCE(sat))2.1V@40A,15V
Reverse Recovery Time(trr)60ns
Switching Energy(Eoff)100uJ
Turn-On Energy (Eon)360uJ
Input Capacitance(Cies)2.5nF

Technical details

255W 74A 650V TO-247-3 Single IGBTs RoHS

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