Infineon · Thyristors & Power Discretes · MPN IKW40N65ET7
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| Td(off) | 310ns |
|---|---|
| Pd - Power Dissipation | 230.8W;115.4W |
| Td(on) | 20ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 76A;49.5A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 25pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V |
| Vce Saturation(VCE(sat)) | 1.35V |
| Reverse Recovery Time(trr) | 85ns |
| Collector Cut-Off Current (Ices) | 900uA |
650V FS (Field Stop) TO-247-3 Single IGBTs RoHS