Infineon · Thyristors & Power Discretes · MPN IKW40N60H3
No reviews yet — be the first to review Infineon IKW40N60H3.
| Td(off) | 197ns |
|---|---|
| Pd - Power Dissipation | 306W |
| Td(on) | 19ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 64pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.58mA |
| Vce Saturation(VCE(sat)) | 2.4V@40A,15V |
| Reverse Recovery Time(trr) | 124ns |
| Switching Energy(Eoff) | 580uJ |
306W 40A 600V FS (Field Stop) TO-247-3 Single IGBTs RoHS