Infineon IKW40N120T2

Infineon · Thyristors & Power Discretes · MPN IKW40N120T2

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Specifications

Td(off)314ns
Pd - Power Dissipation480W
Td(on)33ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)75A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)125pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.2V@1.5mA
Vce Saturation(VCE(sat))2.2V@40A,15V
Reverse Recovery Time(trr)285ns
Switching Energy(Eoff)2.05mJ
Turn-On Energy (Eon)3.2mJ

Technical details

480W 75A 1.2kV TO-247-3 Single IGBTs RoHS

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