Infineon IKW40N120CS6

Infineon · Thyristors & Power Discretes · MPN IKW40N120CS6

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Specifications

Td(off)315ns
Pd - Power Dissipation500W
Td(on)27ns
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)-
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.15V@15V,40A
Gate Charge(Qg)285nC
Reverse Recovery Time(trr)400ns
Switching Energy(Eoff)1.55mJ

Technical details

IGBT FS (Field Stop) 1.2kV 80A 500W Through Hole TO-247-3

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