Infineon · Thyristors & Power Discretes · MPN IKW40N120CS6
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| Td(off) | 315ns |
|---|---|
| Pd - Power Dissipation | 500W |
| Td(on) | 27ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,40A |
| Gate Charge(Qg) | 285nC |
| Reverse Recovery Time(trr) | 400ns |
| Switching Energy(Eoff) | 1.55mJ |
IGBT FS (Field Stop) 1.2kV 80A 500W Through Hole TO-247-3