Infineon IKW30N65WR5

Infineon · Thyristors & Power Discretes · MPN IKW30N65WR5

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Specifications

Td(off)367ns
Pd - Power Dissipation185W
Operating Temperature-40℃~+175℃
Td(on)39ns
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)16pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.2V@0.3mA
Vce Saturation(VCE(sat))1.8V@30A,15V
Reverse Recovery Time(trr)95ns
Switching Energy(Eoff)330uJ
Turn-On Energy (Eon)990uJ

Technical details

185W 30A 650V TO-247-3 Single IGBTs RoHS

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