Infineon IKW30N65NL5

Infineon · Thyristors & Power Discretes · MPN IKW30N65NL5

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Specifications

Pd - Power Dissipation227W
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)85A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Reverse Recovery Time(trr)59ns
Switching Energy(Eoff)1.35mJ
Turn-On Energy (Eon)560uJ

Technical details

227W 85A 650V TO-247-3 Single IGBTs RoHS

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