Infineon · Thyristors & Power Discretes · MPN IKW30N65ET7XKSA1
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| Td(off) | 245ns |
|---|---|
| Pd - Power Dissipation | 188W |
| Td(on) | 20ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 180nC |
| Reverse Recovery Time(trr) | 80ns |
| Switching Energy(Eoff) | 500uJ |
IGBT FS (Field Stop) 650V 30A 188W Through Hole TO-247-3