Infineon · Thyristors & Power Discretes · MPN IKW30N65ET7
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| Td(off) | 245ns |
|---|---|
| Pd - Power Dissipation | 188W |
| Td(on) | 19ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 20pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@0.3mA |
| Vce Saturation(VCE(sat)) | 1.65V@30A,15V |
| Reverse Recovery Time(trr) | 80ns |
| Switching Energy(Eoff) | 500uJ |
188W 60A 650V FS (Field Stop) TO-247-3 Single IGBTs RoHS