Infineon · Thyristors & Power Discretes · MPN IKW30N65ES5
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| Td(off) | 124ns |
|---|---|
| Pd - Power Dissipation | 188W |
| Td(on) | 17ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 62A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 7pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@0.3mA |
| Vce Saturation(VCE(sat)) | 1.7V@30A,15V |
| Reverse Recovery Time(trr) | 75ns |
| Switching Energy(Eoff) | 320uJ |
| Turn-On Energy (Eon) | 560uJ |
188W 62A 650V TO-247-3 Single IGBTs RoHS