Infineon · Thyristors & Power Discretes · MPN IKW30N65EL5XKSA1
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| Td(off) | 308ns |
|---|---|
| Pd - Power Dissipation | 227W |
| Td(on) | 33ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 85A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 18pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.2V@0.4mA |
| Vce Saturation(VCE(sat)) | 1.35V@30A,15V |
| Reverse Recovery Time(trr) | 100ns |
| Switching Energy(Eoff) | 1.35mJ |
IGBT 650V 85A 227W Through Hole TO-247-3