Infineon IKW30N60TFKSA1

Infineon · Thyristors & Power Discretes · MPN IKW30N60TFKSA1

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Specifications

Td(off)254ns
Pd - Power Dissipation187W
Td(on)23ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)45A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.1V@0.43mA
Vce Saturation(VCE(sat))2.05V@30A,15V
Reverse Recovery Time(trr)143ns
Switching Energy(Eoff)770uJ
Turn-On Energy (Eon)690uJ

Technical details

IGBT FS (Field Stop) 600V 45A 187W Through Hole TO-247-3

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