Infineon · Thyristors & Power Discretes · MPN IKW25T120
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| Td(off) | 560ns |
|---|---|
| Pd - Power Dissipation | 190W |
| Td(on) | 50ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 82pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Vce Saturation(VCE(sat)) | 2.2V@25A,15V |
| Reverse Recovery Time(trr) | 200ns |
| Switching Energy(Eoff) | 2.2mJ |
190W 50A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS