Infineon · Thyristors & Power Discretes · MPN IKW25N120T2
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| Pd - Power Dissipation | 349W |
|---|---|
| Td(off) | 265ns |
| Operating Temperature | -40℃~+175℃ |
| Td(on) | 27ns |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 90pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1.0mA |
| Gate Charge(Qg) | 120nC@15V |
| Vce Saturation(VCE(sat)) | 2.2V@25A,15V |
| Reverse Recovery Time(trr) | 195ns |
| Switching Energy(Eoff) | 1.35mJ |
349W 50A 1.2kV TO-247-3 Single IGBTs RoHS