Infineon · Thyristors & Power Discretes · MPN IKW25N120H3
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| Td(off) | 277ns |
|---|---|
| Pd - Power Dissipation | 326W |
| Operating Temperature | -40℃~+175℃ |
| Td(on) | 27ns |
| Current - Collector(Ic) | 25A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 75pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@0.85mA |
| Vce Saturation(VCE(sat)) | 2.4V@25A,15V |
| Reverse Recovery Time(trr) | 290ns |
| Switching Energy(Eoff) | 850uJ |
326W 25A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS