Infineon IKW25N120CS7XKSA1

Infineon · Thyristors & Power Discretes · MPN IKW25N120CS7XKSA1

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Specifications

Pd - Power Dissipation250W
Td(off)160ns
Td(on)21ns
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)55A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)17pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.15V@0.49mA
Vce Saturation(VCE(sat))2V@25A,15V
Reverse Recovery Time(trr)150ns
Switching Energy(Eoff)1.1mJ

Technical details

IGBT 1.2kV 55A 250W Through Hole TO-247-3

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