Infineon · Thyristors & Power Discretes · MPN IKW20N65ET7XKSA1
No reviews yet — be the first to review Infineon IKW20N65ET7XKSA1.
| Td(off) | 210ns |
|---|---|
| Pd - Power Dissipation | 136W |
| Td(on) | 16ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.65V@15V,20A |
| Gate Charge(Qg) | 128nC |
| Reverse Recovery Time(trr) | 70ns |
| Switching Energy(Eoff) | 360uJ |
IGBT FS (Field Stop) 650V 40A 136W Through Hole TO-247-3